Extreme Ultraviolet Lithography: Towards the Next Generation of Integrated Circuits
Optics & Photonics Focus
Volume 7 Story 4 - 4/11/2009

2007 ITRS lithography roadmap for semiconductors

At the moment, it is predicted that EUVL will have some pilot-scale applications at the 32 nm technology node or will be used in full production for the 22 nm half-pitch technology node. High volume manufacturing (HVM) pre-production (beta) exposure aligners will be delivered to multiple end-users starting in 2010. Adapted with permission from "Extreme Ultraviolet Lithography," McGraw-Hill Professional, 2009.
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2007 ITRS lithography roadmap for semiconductors. At the moment, it is predicted that EUVL will have some pilot-scale applications at the 32 nm technology node or will be used in full production for the 22 nm half-pitch technology node. High volume manufacturing (HVM) pre-production (beta) exposure aligners will be delivered to multiple end-users starting in 2010.